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IS61SF51218D-10B - 512K X 18 CACHE SRAM, 10 ns, PBGA119 512K X 18 CACHE SRAM, 10 ns, PQFP100 512K X 18 CACHE SRAM, 9 ns, PQFP100

IS61SF51218D-10B_6727795.PDF Datasheet


 Full text search : 512K X 18 CACHE SRAM, 10 ns, PBGA119 512K X 18 CACHE SRAM, 10 ns, PQFP100 512K X 18 CACHE SRAM, 9 ns, PQFP100


 Related Part Number
PART Description Maker
CY7C1380C-200AC CY7C1380C-200BGC CY7C1380C-167AC C Memory : Sync SRAMs
PUSHBUTTON, METAL, FLAT, 22MM 5A; Switch function type:NC/NO Mom; Voltage, contact AC max:250V; Temp, op. max:55(degree C); Temp, op. min:-20(degree C); Diameter, panel cut-out:22.2mm; Length / Height, external:32mm; Dielectric RoHS Compliant: Yes
18-Mb (512K x 36/1M x 18) Pipelined SRAM 1M X 18 CACHE SRAM, 2.8 ns, PBGA165
18-Mb (512K x 36/1M x 18) Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA165
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 2.8 ns, PBGA165
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 3 ns, PQFP100
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 2.8 ns, PQFP100
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 3.4 ns, PQFP100
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
IS61SF51218T-8.5TQI IS61SF51218D-8B 512K X 18 CACHE SRAM, 8.5 ns, PQFP100
512K X 18 CACHE SRAM, 8 ns, PBGA119
INTEGRATED SILICON SOLUTION INC
CY7C1382DV25-250BZC CY7C1382DV25-200BZC CY7C1382DV 18-Mbit (512K x 36/1M x 18) Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PQFP100
18-Mbit (512K x 36/1M x 18) Pipelined SRAM 1M X 18 CACHE SRAM, 3 ns, PQFP100
18-Mbit (512K x 36/1M x 18) Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA165
18-Mbit (512K x 36/1M x 18) Pipelined SRAM 1M X 18 CACHE SRAM, 3.4 ns, PBGA119
18-Mbit (512K x 36/1M x 18) Pipelined SRAM 1M X 18 CACHE SRAM, 3 ns, PBGA119
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
CY7C1361C-133AXC CY7C1361C-133BGI CY7C1361C-133AJX 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM 256K X 36 CACHE SRAM, 8.5 ns, PBGA119
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM 256K X 36 CACHE SRAM, 8.5 ns, PBGA165
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM 9兆位56 × 36/512K × 18)流通过的SRAM
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM 256K X 36 CACHE SRAM, 6.5 ns, PBGA165
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
CY7C1380F-200BGXI CY7C1380F-167BGXI CY7C1380D-250B 18-Mbit (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 3 ns, PBGA119
18-Mbit (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 3.4 ns, PBGA119
18-Mbit (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 2.6 ns, PBGA165
18-Mbit (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 2.6 ns, PBGA119
Cypress Semiconductor, Corp.
CY7C1363C-133BZC CY7C1363C-100BZI CY7C1363C-100BGC 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM 512K X 18 CACHE SRAM, 6.5 ns, PBGA165
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM 512K X 18 CACHE SRAM, 8.5 ns, PBGA165
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM 512K X 18 CACHE SRAM, 8.5 ns, PBGA119
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
IS61LPD25636T-166TQI IS61LPD25636J-166B IS61LPD512 256K X 36 CACHE SRAM, 3.5 ns, PQFP100 TQFP-100
256K X 36 CACHE SRAM, 3.5 ns, PBGA119
512K X 18 CACHE SRAM, 2.8 ns, PBGA119
Integrated Silicon Solution, Inc.
INTEGRATED SILICON SOLUTION INC
CY7C1372CV25-167AI CY7C1372CV25-167BGI CY7C1372CV2 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA119
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA119
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 12k × 36/1M × 18流水线的SRAM架构的总线延迟
CAP,Ceramic,10000pF,500VDC,10-% Tol,10% Tol,X7R-TC Code,-15,15%-TC,30ppm-TC RoHS Compliant: Yes
512K x 36/1M x 18 Pipelined SRAM with NoBL Architecture
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
GS8161E18BD-150 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 1M X 18 CACHE SRAM, 7.5 ns, PBGA165
GSI Technology, Inc.
GS88032T--11.5I GS88036T--11.5I GS88036T-100I GS88 512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 12 ns, PQFP100
512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 18 ns, PQFP100
512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 14 ns, PQFP100
512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 11 ns, PQFP100
512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 11.5 ns, PQFP100
512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 11 ns, PQFP100
512K X 18 CACHE SRAM, 11 ns, PQFP100 TQFP-100
512K X 18 CACHE SRAM, 11.5 ns, PQFP100 TQFP-100
GSI Technology, Inc.
 
 Related keyword From Full Text Search System
IS61SF51218D-10B ic资料查询 IS61SF51218D-10B voltage vgs IS61SF51218D-10B rectifier IS61SF51218D-10B использование IS61SF51218D-10B 参数网
IS61SF51218D-10B Series IS61SF51218D-10B interface IS61SF51218D-10B power suppiy IS61SF51218D-10B temperature IS61SF51218D-10B filetype:pdf
 

 

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